Micron boosts NAND flash endurance six-fold
Micron Corp. today introduced what it claims to be the industry's highest endurance, highest capacity multi-level cell (MLC) and single-level cell (SLC) NAND flash memory.
Micron Corp. today introduced what it claims to be the industry's highest endurance, highest capacity multi-level cell (MLC) and single-level cell (SLC) NAND flash memory.
Intel and Micron Technology have developed a new 3-bit-per-cell, NAND flash memory technology using Micron's 34-nanometer lithography process.
A Taiwanese research group has turned to RRAM (Resistive-RAM) as the latest possible Holy Grail of memory chips, one that can replace both DRAM and NAND flash memory.
When Samsung Electronics offered to buy SanDisk for US$5.85 billion (NZ$8.48 billion) earlier this month, some in the industry hoped news of the possible takeover might stem a long-running decline in NAND flash memory chip prices.
A massive decline in the price of NAND flash memory, the chips that store photos in digital cameras and music in iPods, is prompting innovation among companies trying to increase sales.